"Artificial atoms in silicon and their photonic integration"
Dr. Valeria Saggio
  Massachusetts Institute of Technology (USA)

Artificial atoms in solids are leading candidates for quantum networks, scalable quantum computing, and sensing, as they combine long-lived spins with mobile and robust photonic qubits. A central goal is to realize photonic platforms that can scale and individually address and control single atoms. Recently, silicon has emerged as a promising host material where artificial atoms with long spin coherence times and emission into the telecommunications band can be controllably created and addressed. This field leverages the maturity of silicon photonics to embed quantum emitters into the world’s most advanced microelectronics and photonics platform. However, a current bottleneck is the naturally weak emission rate of artificial atoms. An open challenge is to enhance this interaction via coupling to an optical cavity. In my talk, I will discuss the integration of silicon color centers in optical cavities and show the enhancement of their brightness when successful cavity-atom coupling is achieved. I will further discuss the prospects for their applications in the context of quantum information processing.